Terahertz meta-chip switch based on C-ring coupling

Sen Gong; Hongxin Zeng; Qianyu Zhang; Chunyang Bi; Lan Wang; Tianchi Zhou; Ziqiang Yang; Yaxin Zhang; Fanzhong Meng; Zhenpeng Zhang; Yuan Fang

doi:10.1515/nanoph-2021-0646

Terahertz meta-chip switch based on C-ring coupling

Nanophotonics. 2022 Jan 4;11(9):2037-2044. doi: 10.1515/nanoph-2021-0646. eCollection 2022 Apr.

Authors

Sen Gong^{1

2}, Hongxin Zeng^{1

2}, Qianyu Zhang^{1

2}, Chunyang Bi^{1

2}, Lan Wang^{1

2}, Tianchi Zhou^{1

2}, Ziqiang Yang^{1

2}, Yaxin Zhang^{1

2}, Fanzhong Meng³, Zhenpeng Zhang³, Yuan Fang³

Affiliations

¹ Sichuan Terahertz Communication Technology Engineering Research Center, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China.
² Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Chengdu, China.
³ National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute Shijiazhuang 050051, Shijiazhuang, China.

Abstract

Terahertz switch is one of the key components of future communication, radar, and imaging systems. Limited by the strong electromagnetic coupling in subwavelength scale, the traditional terahertz switch is difficult to meet the increasing application requirements. In this paper, a parallel topology terahertz meta-chip switch based on the combination of equivalent circuit theory and electromagnetic coupling is proposed. The meta-chip is realized by adjusting the density of two-dimensional electron gas of InP-HEMT, which converts the electromagnetic coupling between the microstructure and microstrips. By using the 90 nm gate length InP-HEMT process, a C-ring loaded meta-chip is fabricated and tested in this paper. The results show an insertion loss lower than 1 dB with a 10 dB switching ratio, which is 20% higher than that without C-ring while ensuring the rather low insertion loss. It shows that the presented mechanism has positive significance for the design of terahertz band functional devices.

Keywords: C-ring; InP-HEMT; switch; terahertz meta-chip.