A resistive switching device with precise control over the formation of conductive filaments (CF) holds immense potential for high-density memory arrays and atomic-scale in-memory computing architectures. While ion migration and electrochemical switching mechanisms are well understood, controlling the evolution of CF remains challenging for practical resistive random-access memory (RRAM) deployment. This study introduces a systematic approach to modulate oxygen vacancies (OV) in HfO2 films of Ag/HfO2/Pt-based RRAM devices by controlling the substrate temperature. At 300 °C, the HfO2 film exhibits a dominant monoclinic phase with maximum OV concentration, which plays a key role in achieving optimal multilevel resistive switching behavior. Self-assembled nanochannels in the HfO2 films guide CF evolution, and the diffusion of Ag at inside these films suggests a synergistic interplay between OV and Ag⁺ ion migration for reseting the voltage-controlled resistive states. This approach addresses the endurance/retention trade-off with an impressive Ron/Roff ratio of ≈8000 while demonstrating growth temperature-driven OV modulation as a tool for multi-bit data storage. These findings provide a blueprint for developing high-performance oxide-based RRAM devices and offer valuable insights into multilevel resistive switching mechanisms, paving the way for future low-power, high-density memory technologies.
Keywords: HfO2 films; cation migration; conductive filament; multilevel resistive switching; oxygen vacancy; self‐assembled nanochannel.
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