We fabricated radially transformed growth of MoS2 to MoS2-MoO2 by the two-zone chemical vapor transport (CVT) technique. The idea to apply heat, i.e., hot junction (TH), on both the edges of the film has a distinct ambipolar Seebeck coefficient (S) of -20 μVK-1 with MoS2 as hot junction, and 69.5 μVK-1 with MoS2-MoO2 as hot junction. The positive S at MoS2-MoO2 indicates fast hole injection at a lower degree of interface Fermi-level pinning and large asymmetry at the junctions through low energy carrier scattering in the multiple potential barriers at the interfaces of each region. The decreased ΘD around 5 K than MoS2 reveals the lattice softening due to reduced strength of chemical bonding at MoS2-MoO2. The report propounds the potential utilization of multiple potential barriers for thin film graded composites in thermoelectric applications.