Targeted elimination of tetravalent-Sn-induced defects for enhanced efficiency and stability in lead-free NIR-II perovskite LEDs

Xiang Guan; Yuqing Li; Yuanyuan Meng; Kongxiang Wang; Kebin Lin; Yujie Luo; Jing Wang; Zhongtao Duan; Hong Liu; Liu Yang; Lingfang Zheng; Junpeng Lin; Yalian Weng; Fengxian Xie; Jianxun Lu; Zhanhua Wei

doi:10.1038/s41467-024-54160-x

Targeted elimination of tetravalent-Sn-induced defects for enhanced efficiency and stability in lead-free NIR-II perovskite LEDs

Nat Commun. 2024 Nov 15;15(1):9913. doi: 10.1038/s41467-024-54160-x.

Authors

Xiang Guan^#^{1

2}, Yuqing Li^#², Yuanyuan Meng², Kongxiang Wang¹, Kebin Lin², Yujie Luo¹, Jing Wang¹, Zhongtao Duan¹, Hong Liu¹, Liu Yang², Lingfang Zheng², Junpeng Lin², Yalian Weng², Fengxian Xie³, Jianxun Lu^{4

5}, Zhanhua Wei⁶

Affiliations

¹ Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University, Shanghai, China.
² Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China.
³ Institute for Electric Light Sources, Shanghai Engineering Research Center for Artificial Intelligence and Integrated Energy System, School of Information Science and Technology, Fudan University, Shanghai, China. xiefengxian@fudan.edu.cn.
⁴ Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China. jianxun.lu@kaust.edu.sa.
⁵ Division of Physical Science and Engineering, KAUST Catalysis Center (KCC), King Abdullah University of Science and Technology, Thuwal, Kingdom of Saudi Arabia. jianxun.lu@kaust.edu.sa.
⁶ Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, China. weizhanhua@hqu.edu.cn.

^# Contributed equally.

Abstract

Eco-friendly Sn-based perovskites show significant potential for high-performance second near-infrared window light-emitting diodes (900 nm - 1700 nm). Nevertheless, achieving efficient and stable Sn-based perovskite second near-infrared window light-emitting diodes remains challenging due to the propensity of Sn²⁺ to oxidize, resulting in detrimental Sn⁴⁺-induced defects and compromised device performance. Here, we present a targeted strategy to eliminate Sn⁴⁺-induced defects through moisture-triggered hydrolysis of tin tetrahalide, without degrading Sn²⁺ in the CsSnI₃ film. During the moisture treatment, tin tetrahalide is selectively hydrolyzed to Sn(OH)₄, which provides sustained protection. As a result, we successfully fabricate second near-infrared window light-emitting diodes emitting at 945 nm, achieving a performance breakthrough with an external quantum efficiency of 7.6% and an operational lifetime reaching 82.6 h.

Abstract

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