We investigate an interlayer of 6,6'-bis(4-(bis(4-methoxyphenyl)amino)phenyl)-[1,1'-binaphthalene]-(2,2'-diyl)bis(oxy)bis(propane-3,1-diyl)bis(phosphonic acid) (BINOL-PA) with undoped poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) coverage. The incorporation of the 1,10-bi-2-naphthol central core enhances π-π stacking and reduces charge recombination at the interface. Compared to PTAA alone (0.95 eV), BINOL-PA/PTAA exhibits a shorter distance from the Fermi energy (EF) to the valence-band maximum (VBM) (0.36 eV). Two phosphoric acid units in BINOL-PA fine-tune the molecular dipoles. Theoretical calculations reveal electrostatic surface potential differences between BINOL-PA and PTAA in their backbone structure. Open-circuit voltage decay (OCVD) and electrochemical impedance spectroscopy (EIS) results suggest suppressed interface recombination. The photovoltaic conversion efficiency (PCE), short-circuit current density (JSC), open-circuit voltage (VOC), and fill factor (FF) for the BINOL-PA/PTAA device are measured as 21.02%, 22.67 mA cm-2, 1.12 V, and 82.8%, respectively, all higher than those achieved by the PTAA device with a PCE of 18%. BINOL-PA/PTAA significantly elevates VOC and FF values compared with dopant-free PTAA alone. The champion device retains over 89% of its initial PCE after being exposed to an ambient environment without encapsulation for more than 30 days. The thermal aging test conducted under a nitrogen atmosphere demonstrates that the efficiency retention rate for BINOL-PA/PTAA displays 60% of its initial efficiency after 1500 h.
Keywords: dopant-free; interface engineering; interlayer; inverted perovskite solar cells; phosphonic acid.