Valley-Polarized Topological Phases with In-Plane Magnetization

Nano Lett. 2024 Oct 23;24(42):13213-13218. doi: 10.1021/acs.nanolett.4c03252. Epub 2024 Oct 8.

Abstract

The coexistence of valley polarization and topology has considerably facilitated the applications of 2D materials toward valleytronics device technology. However, isolated and distinct valleys are required to observe the valley-related quantum phenomenon. Herein, we report a new mechanism to generate in-plane magnetization direction-dependent isolated valley carriers by preserving or breaking the mirror symmetry in a 2D system. First-principle calculations are carried out on a prototype material, W2MnC2O2 MXene, to demonstrate the mechanism. A valley-coupled topological phase transition among Weyl semimetal, valley-polarized quantum anomalous Hall insulator, and topological semimetal is observed by manipulating the in-plane magnetization directions in W2MnC2O2. Monte Carlo simulations of W2MnC2O2 show that the estimated Curie temperature is around 170 K, indicating the possibility of observing valley-polarized topological states at higher temperatures. Our finding provides a generalized platform for investigating the valley and topological physics, which is extremely important for future quantum information processing applications.

Keywords: in-plane magnetization; mirror symmetry; quantum anomalous Hall effect; search rule; topological phases; valley polarization.