Self-driven photodetectors (PDs) hold significant potential for the development of new information devices, which boast the advantages of ultralow power consumption and straightforward fabrication. In this study, we have proposed and demonstrated a self-driven ultraviolet PD utilizing gallium nitride/metal-organic framework (GaN/MOF) heterojunction nanowires successfully. By introducing Gd-ETTC MOFs on the surface of GaN nanowires, the photocurrent and responsivity of the device can be improved by approximately 75% under 310 nm illumination. Furthermore, they can also be effectively enhanced under visible light illumination. Owing to the appropriate energy level alignment, Gd-ETTC MOFs can serve as both a light harvester and a hole conductor, facilitating the efficient absorption, separation, and transmission of photogenerated carriers. It has been observed that due to reduced interface resistance, MOFs can enhance the charge transport through the acceleration of charge transfer. Furthermore, the PD equipped with MOFs is capable of continuous operation for 30,000 s, a feat attributable to the exceptional stability of both GaN nanowires and Gd-ETTC MOFs. By implementation of the humanoid robot systems, the control commands from the self-driven PD can drive the humanoid robot to execute different actions. The PD-equipped autonomous feedback system of a humanoid robot enables a seamless integration of light perception with intelligent robotic actions. Therefore, the design and demonstration of GaN/MOF nanowires hold significant reference value for further enhancing the performance of PDs and broadening their applications in ultralow-power artificial intelligence systems, humanoid intelligent robots, etc.
Keywords: core–shell nanowire heterojunction; humanoid intelligent robot; metal–organic framework; self-driven photodetector; vertical GaN nanowires.