Spatially Controlled Phase Transition in MoTe2 Driven by Focused Ion Beam Irradiations

ACS Appl Mater Interfaces. 2024 Jun 19;16(24):31747-31755. doi: 10.1021/acsami.4c03546. Epub 2024 Jun 5.

Abstract

Phase transitions play an important role in tuning the physical properties of two-dimensional (2D) materials as well as developing their high-performance device applications. Here, we reported the observation of a phase transition in few-layered MoTe2 flakes by the irradiation of gallium (Ga+) ions using a focused ion beam (FIB) system. The semiconducting 2H phase of MoTe2 can be controllably converted to the metallic 1T'-like phase via Te defect engineering during irradiations. By taking advantage of the nanometer-sized Ga+ ion probe proved by FIB, in-plane 1T'-2H homojunctions of MoTe2 at submicrometer scale can be fabricated. Furthermore, we demonstrate the improvement of device performance (on-state current over 2 orders of magnitude higher) in MoTe2 transistors using the patterned 1T'-like phase regions as contact electrodes. Our study provides a new strategy to drive the phase transitions in MoTe2, tune their properties, and develop high-performance devices, which also extends the applications of FIB technology in 2D materials and their devices.

Keywords: 2D materials; defect engineering; focused ion beam; molybdenum ditelluride; phase transition.