Realization of low potential barrier in MoS2/rGO heterojunction with enhanced electrical conductivity for thin film thermoelectric applications

Archana C; Abinaya Rengarajan; Archana J; Navaneethan M; Harish Santhanakrishnan

doi:10.1088/1361-6528/ad263e

Realization of low potential barrier in MoS₂/rGO heterojunction with enhanced electrical conductivity for thin film thermoelectric applications

Nanotechnology. 2024 Mar 1;35(20). doi: 10.1088/1361-6528/ad263e.

Authors

Archana C¹, Abinaya Rengarajan¹, Archana J¹, Navaneethan M^{1

2}, Harish Santhanakrishnan¹

Affiliations

¹ Functional Materials and Energy Devices Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur-603 203, India.
² Nanotechnology Research Centre (NRC), Faculty of Engineering and Technology, SRM Institute of Science and Technology, Kattankulathur-603 203, India.

PMID: 38316036
DOI: 10.1088/1361-6528/ad263e

Abstract

Two-dimensional (2D) van der Waals materials in-plane anisotropy, caused by a low-symmetric lattice structure, has considerably increased their applications, particularly in thermoelectric. MoS₂and MoS₂/reduced graphene oxide (rGO) thin films were grown on SiO₂/Si substrate by atmospheric chemical vapor deposition technique to study the thermoelectric performance. Few layered MoS₂was confirmed by the vibrational analysis and the composition elements are confirmed by the x-ray photoelectron spectroscopy technique. The continuous grains lead to reduced phonon life time in A_1gand low activation energy assists to enhance the electrical property. The MoS₂/rGO has achieved the highestσof 22 622 S m^-1at 315 K due to an electron-rich cloud around the electrons in S atoms near the adjacent layer of rGO.

Keywords: MoS2; Potential barrier; electron-rich; heterojunction; rGO.