Synthesis and Characterization of a Trigonal Layered Compound AgInS2

Takahiro Sawahara; Ryo Matsumoto; Yuki Nakahira; Hidetomo Usui; Noriyuki Kataoka; Ryusei Saitou; Takanori Wakita; Takayoshi Yokoya; Aichi Yamashita; Yosuke Goto; Yoshihiko Takano; Akira Miura; Yoshikazu Mizuguchi

doi:10.1021/acsomega.2c08289

Synthesis and Characterization of a Trigonal Layered Compound AgInS₂

ACS Omega. 2023 Mar 16;8(12):11288-11292. doi: 10.1021/acsomega.2c08289. eCollection 2023 Mar 28.

Authors

Affiliations

¹ Department of Physics, Tokyo Metropolitan University, 1-1 Minami-Osawa, Hachioji, Tokyo 192-0397, Japan.
² International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-2-1, Sengen, Tsukuba, Ibaraki 305-0047, Japan.
³ Quantum Beam Science Research Directorate, National Institutes for Quantum Science and Technology, 1-1-1, Koto, Sayo-cho, Hyogo 679-5148, Japan.
⁴ Department of Physics and Materials Science, Shimane University, 1060, Nishi-kawadu Cho, Matsue 690-8504, Japan.
⁵ Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Tsushima, Kita-ku, Okayama 700-8530, Japan.
⁶ Research Institute for Interdisciplinary Science, Okayama University, 3-1-1 Tsushima-naka, Tsushima, Kita-ku, Okayama 700-8530, Japan.
⁷ National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan.
⁸ Faculty of Engineering, Hokkaido University, Kita 13, Nishi 8, Kita-ku, Sapporo, Hokkaido 060-0813, Japan.

Abstract

Depending on thermal and pressure conditions, AgInS₂ exhibits various crystal structures. In this study, we synthesized a high-purity polycrystalline sample of trigonal AgInS₂, which is a layered compound, using a high-pressure synthesis technique. The crystal structure was investigated by synchrotron powder X-ray diffraction and the Rietveld refinement. On the basis of band calculation, X-ray photoelectron spectroscopy, and electrical resistance measurements, we found that the obtained trigonal AgInS₂ is a semiconductor. Temperature dependencies of electrical resistance of AgInS₂ were measured by a diamond anvil cell up to 31.2 GPa. Although semiconducting behavior was suppressed with pressure, metallic behavior was not observed within the pressure range investigated in this study.