Author Correction: The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS2 heterojunction: a first-principles study
Sci Rep. 2022 Dec 6;12(1):21086.
doi: 10.1038/s41598-022-25621-4.
1 Institute of High-Performance Computing, A*STAR, 1 Fusionopolis Way, Singapore, 138632, Singapore. sorkinv@ihpc.a-star.edu.sg.
2 Institute of High-Performance Computing, A*STAR, 1 Fusionopolis Way, Singapore, 138632, Singapore.
3 Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore. kahwee.ang@nus.edu.sg.
4 Institute of Materials Research and Engineering, A*STAR, 2 Fusionopolis Way, Singapore, 138634, Singapore. kahwee.ang@nus.edu.sg.
5 Institute of High-Performance Computing, A*STAR, 1 Fusionopolis Way, Singapore, 138632, Singapore. zhangyw@ihpc.a-star.edu.sg.