Photoluminescence properties of cuprous phosphide prepared through phosphating copper with a native oxide layer

Xue Peng; Yanfei Lv; Li Fu; Fei Chen; Weitao Su; Jingzhou Li; Qi Zhang; Shichao Zhao

doi:10.1039/d1ra07112b

Photoluminescence properties of cuprous phosphide prepared through phosphating copper with a native oxide layer

RSC Adv. 2021 Oct 21;11(54):34095-34100. doi: 10.1039/d1ra07112b. eCollection 2021 Oct 18.

Authors

Xue Peng¹, Yanfei Lv¹, Li Fu¹, Fei Chen¹, Weitao Su¹, Jingzhou Li², Qi Zhang¹, Shichao Zhao¹

Affiliations

¹ College of Materials & Environmental Engineering, Hangzhou Dianzi University Hangzhou 310018 P. R. China lvyanfei@hdu.edu.cn zhaoshichao@hdu.edu.cn.
² Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences Hangzhou 310024 P. R. China lijingzhou@ucas.ac.cn.

Abstract

Although cuprous phosphide (Cu₃P) has been widely studied and applied in other fields, its photoluminescence (PL) properties are rarely investigated. Herein, we report that Cu₃P can emit near-infrared light at 750 nm. We show that the annealing and the presence of cuprous oxide can enhance the PL emission. The mechanism of the PL enhancement is the improvement of crystal quality and the formation of a space charge region. Our results provide a reference for improving the PL properties of p-type semiconductors.