A dual-functional Ta/TaO x /Ru device with both nonlinear selector and resistive switching behaviors

Rui Wang; Tuo Shi; Xumeng Zhang; Zuheng Wu; Qi Liu

doi:10.1039/d1ra02350k

A dual-functional Ta/TaO _x /Ru device with both nonlinear selector and resistive switching behaviors

RSC Adv. 2021 May 20;11(30):18241-18245. doi: 10.1039/d1ra02350k. eCollection 2021 May 19.

Authors

Rui Wang^{1

2}, Tuo Shi^{1

2

3}, Xumeng Zhang^{1

4}, Zuheng Wu^{1

2}, Qi Liu^{1

2

4}

Affiliations

¹ The Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences Beijing 100029 China shituo@ime.ac.cn.
² University of Chinese Academy of Sciences Beijing 100049 China.
³ Institute of Artificial Intelligence, Zhejiang Laboratory Hangzhou 311122 China.
⁴ The Frontier Institute of Chip and System, Fudan University Shanghai 200433 China.

Abstract

In this work, we demonstrate that a Ta/TaO _x /Ru device can act as both a highly uniform and nonlinear selection device and a stable resistive switching device, respectively, by controlling the voltage applied to the Ta electrode. As a selection device, it shows high selectivity (10³), high current density (25 kA cm^-2), very low variation, and good endurance. The non-linear performance of the device may be attributed to a trapezoidal band structure modulated by the concentration gradient of oxygen vacancies. Furthermore, with a large voltage bias on the Ta electrode, a repeatable and stable resistive switching behavior was observed, which could be attributed to the formation of conductive filaments probably composed of Ta metal and oxygen vacancies. This research deepens the understanding of the mechanism of Ta/TaO _x devices, and provides a potential solution for large-scale memristor arrays.