Accurate and efficient measurements of the piezoelectric properties of AlN and AlScN films are very important for the design and simulation of micro-electro-mechanical system (MEMS) sensors and actuator devices. In this study, a process control monitor (PCM) structure compatible with the device manufacturing process is designed to achieve accurate determination of the piezoelectric coefficients of MEMS devices. Double-beam laser interferometry (DBLI) and laser Doppler vibrometry (LDV) measurements are applied and combined with finite element method (FEM) simulations, and values of the piezoelectric parameters d33 and d31 are simultaneously extracted. The accuracy of d31 is verified directly by using a cantilever structure, and the accuracy of d33 is verified by in situ synchrotron radiation X-ray diffraction; the comparisons confirm the viability of the results obtained by the novel combination of LDV, DBLI and FEM techniques in this study.
Keywords: ScxAl1−xN; laser interferometry; piezoelectric constants; piezoelectric film; synchrotron X-ray diffraction.