Reflow Soldering Capability Improvement by Utilizing TaN Interfacial Layer in 1Mbit RRAM Chip

Peng Yuan; Danian Dong; Xu Zheng; Guozhong Xing; Xiaoxin Xu

doi:10.3390/mi13040567

Reflow Soldering Capability Improvement by Utilizing TaN Interfacial Layer in 1Mbit RRAM Chip

Micromachines (Basel). 2022 Mar 31;13(4):567. doi: 10.3390/mi13040567.

Authors

Peng Yuan^{1

2}, Danian Dong^{1

2}, Xu Zheng^{1

2}, Guozhong Xing¹, Xiaoxin Xu¹

Affiliations

¹ Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100190, China.
² School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100029, China.

Abstract

We investigated the thermal stability of a 1Mbit OxRRAM array embedded in 28 nm COMS technology. A back-end-of-line (BEOL) solution with a TaN-Ta interfacial layer was proposed to eliminate the failure rate after reflow soldering assembly at 260 °C. By utilizing a TaN-Ta interfacial layer (IL), the oxygen defects in conductive filament were redistributed, and electromigration lifetimes of Cu-based damascene interconnects were improved, which contributed to optimization. This work provides a potential solution for the practical application of embedded RRAM beyond the 28 nm technology node.

Keywords: RRAM; reflow soldering; retention; thermal stability.