Fabrication and Characterization of Black GaAs Nanoarrays via ICP Etching

Jing Ma; Yongqiang Zhao; Wen Liu; Peishuai Song; Liangliang Yang; Jiangtao Wei; Fuhua Yang; Xiaodong Wang

doi:10.1186/s11671-021-03479-1

Fabrication and Characterization of Black GaAs Nanoarrays via ICP Etching

Nanoscale Res Lett. 2021 Jan 21;16(1):15. doi: 10.1186/s11671-021-03479-1.

Authors

Jing Ma^#^{1

2}, Yongqiang Zhao^{1

3}, Wen Liu¹, Peishuai Song^{1

4}, Liangliang Yang^{1

3}, Jiangtao Wei^{1

3}, Fuhua Yang^{1

5}, Xiaodong Wang^{6

7

8

9

10}

Affiliations

¹ Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, China.
² Jihua Laboratory, Foshan, 528200, China.
³ Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 101408, China.
⁴ School of Microelectronics, University of Chinese Academy of Sciences, Beijing, 101408, China.
⁵ State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
⁶ Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, China. xdwang@semi.ac.cn.
⁷ Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 101408, China. xdwang@semi.ac.cn.
⁸ School of Microelectronics, University of Chinese Academy of Sciences, Beijing, 101408, China. xdwang@semi.ac.cn.
⁹ Beijing Academy of Quantum Information Science, Beijing, 100193, China. xdwang@semi.ac.cn.
¹⁰ Beijing Engineering Research Center of Semiconductor Micro-Nano Integrated Technology, Beijing, 100083, China. xdwang@semi.ac.cn.

^# Contributed equally.

Abstract

GaAs nanostructures have attracted more and more attention due to its excellent properties such as increasing photon absorption. The fabrication process on GaAs substrate was rarely reported, and most of the preparation processes are complex. Here, we report a black GaAs fabrication process using a simple inductively coupled plasma etching process, with no extra lithography process. The fabricated sample has a low reflectance value, close to zero. Besides, the black GaAs also displayed hydrophobic property, with a water contact angle of 125°. This kind of black GaAs etching process could be added to the fabrication workflow of photodetectors and solar cell devices to further improve their characteristics.

Keywords: Black GaAs; Hydrophobic; ICP etching; Nanostructures.