Antisymmetric Magnetoresistance in a van der Waals Antiferromagnetic/Ferromagnetic Layered MnPS3/Fe3GeTe2 Stacking Heterostructure

Guojing Hu; Yuanmin Zhu; Junxiang Xiang; Tzu-Yi Yang; Meng Huang; Zhe Wang; Zhi Wang; Ping Liu; Ying Zhang; Chao Feng; Dazhi Hou; Wenguang Zhu; Meng Gu; Chia-Hsiu Hsu; Feng-Chuan Chuang; Yalin Lu; Bin Xiang; Yu-Lun Chueh

doi:10.1021/acsnano.0c05252

Antisymmetric Magnetoresistance in a van der Waals Antiferromagnetic/Ferromagnetic Layered MnPS₃/Fe₃GeTe₂ Stacking Heterostructure

ACS Nano. 2020 Sep 22;14(9):12037-12044. doi: 10.1021/acsnano.0c05252. Epub 2020 Sep 9.

Authors

Guojing Hu^{1

2}, Yuanmin Zhu^{3

4}, Junxiang Xiang^{1

2}, Tzu-Yi Yang^{5

6}, Meng Huang^{1

2}, Zhe Wang^{1

7}, Zhi Wang^{1

2

8}, Ping Liu^{1

2}, Ying Zhang^{1

2

8}, Chao Feng^{1

2}, Dazhi Hou¹, Wenguang Zhu^{1

7}, Meng Gu⁴, Chia-Hsiu Hsu⁹, Feng-Chuan Chuang^{9

10

11}, Yalin Lu^{1

2

8}, Bin Xiang^{1

2

8}, Yu-Lun Chueh^{5

9

6}

Affiliations

¹ Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.
² Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui 230026, China.
³ SUSTech Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology of China, Shenzhen, Guangdong 518055, China.
⁴ Department of Materials Science and Engineering, Southern University of Science and Technology of China, Shenzhen, Guangdong 518055, China.
⁵ Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
⁶ Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan.
⁷ Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
⁸ Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei 230026, China.
⁹ Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan.
¹⁰ Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan.
¹¹ Physics Division, National Center for Theoretical Sciences, Hsinchu 30013, Taiwan.

PMID: 32885948
DOI: 10.1021/acsnano.0c05252

Abstract

The presence of two-dimensional (2D) layer-stacking heterostructures that can efficiently tune the interface properties by stacking desirable materials provides a platform to investigate some physical phenomena, such as the proximity effect and magnetic exchange coupling. Here, we report the observation of antisymmetric magnetoresistance in a van der Waals (vdW) antiferromagnetic/ferromagnetic (AFM/FM) heterostructure of MnPS₃/Fe₃GeTe₂ when the temperature is below the Neel temperature of MnPS₃. Distinguished from two resistance states in conventional giant magnetoresistance, the magnetoresistance in the MnPS₃/Fe₃GeTe₂ heterostructure exhibits three states, of high, intermediate, and low resistance. This antisymmetric magnetoresistance spike is determined by an unsynchronized magnetic switching between the AFM/FM interface layer and the bulk of Fe₃GeTe₂ during magnetization reversal. Our work highlights that the artificial vdW stacking structure holds potential to explore some physical phenomena and spintronic device applications.

Keywords: antiferromagnetic/ferromagnetic structure; antisymmetric magnetoresistance; exchange coupling; unsynchronized magnetic switching; van der Waals heterostructure.