Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane

Kaupo Kukli; Marianna Kemell; Mikko J Heikkilä; Helena Castán; Salvador Dueñas; Kenichiro Mizohata; Mikko Ritala; Markku Leskelä

doi:10.1088/1361-6528/ab6fd6

Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane

Nanotechnology. 2020 May 8;31(19):195713. doi: 10.1088/1361-6528/ab6fd6. Epub 2020 Jan 24.

Authors

Kaupo Kukli¹, Marianna Kemell, Mikko J Heikkilä, Helena Castán, Salvador Dueñas, Kenichiro Mizohata, Mikko Ritala, Markku Leskelä

Affiliation

¹ Department of Chemistry, University of Helsinki, PO Box 55, FI-00014 Helsinki, Finland.

PMID: 31978899
DOI: 10.1088/1361-6528/ab6fd6

Abstract

Amorphous SiO₂-Nb₂O₅ nanolaminates and mixture films were grown by atomic layer deposition. The films were grown at 300 °C from Nb(OC₂H₅)₅, Si₂(NHC₂H₅)₆, and O₃ to thicknesses ranging from 13 to 130 nm. The niobium to silicon atomic ratio was varied in the range of 0.11-7.20. After optimizing the composition, resistive switching properties could be observed in the form of characteristic current-voltage behavior. Switching parameters in the conventional regime were well defined only in a SiO₂:Nb₂O₅ mixture at certain, optimized, composition with Nb:Si atomic ratio of 0.13, whereas low-reading voltage measurements allowed recording memory effects in a wider composition range.