Reply to "Comment on 'Gate-Controlled Metal-Insulator Transition in TiS
3
Nanowire Field-Effect Transistors'"
ACS Nano
.
2019 Aug 27;13(8):8498-8500.
doi: 10.1021/acsnano.9b06062.
Authors
Michael Randle
1
,
Alexey Lipatov
2
,
Avinash Kumar
1
,
Peter A Dowben
3
,
Alexander Sinitskii
2
,
Uttam Singisetti
1
,
Jonathan P Bird
1
Affiliations
1
Department of Electrical Engineering, University at Buffalo , The State University of New York , Buffalo , New York 14260-1900 , United States.
2
Department of Chemistry , University of Nebraska-Lincoln , Lincoln , Nebraska 68588 , United States.
3
Department of Physics & Astronomy, Theodore Jorgensen Hall , University of Nebraska-Lincoln , Lincoln , Nebraska 68588 , United States.
PMID:
31454865
DOI:
10.1021/acsnano.9b06062
No abstract available