Valley polarization and ferroelectricity are the two basic concepts in electronic device applications. However, the coexistence of these two scenarios in one material has not been reported. Here, using first-principles calculations, we demonstrated that the two-dimensional GaAsC6 monolayer which is a hybrid structure of GaAs and graphene has a pair of inequivalent valleys with opposite Berry curvatures and an intrinsic out-of-plane spontaneous electric polarization. It also has a direct band gap of about 1.937 eV and a high carrier mobility of about 1.80 × 105 cm2 V-1 s-1, which are promising for electronic device applications. The integration of valley polarization and ferroelectricity in a single material offers a promising platform for the design of electronic devices.