Effects of high pressure on the ferromagnetism and in-plane electrical transport of (Ba0.904K0.096)(Zn0.805Mn0.195)2As2 single crystal

G Q Zhao; Z Li; F Sun; Z Yuan; B J Chen; S Yu; Y Peng; Z Deng; X C Wang; C Q Jin

doi:10.1088/1361-648X/aac367

Effects of high pressure on the ferromagnetism and in-plane electrical transport of (Ba_0.904K_0.096)(Zn_0.805Mn_0.195)₂As₂ single crystal

J Phys Condens Matter. 2018 Jun 27;30(25):254001. doi: 10.1088/1361-648X/aac367. Epub 2018 May 9.

Authors

G Q Zhao¹, Z Li, F Sun, Z Yuan, B J Chen, S Yu, Y Peng, Z Deng, X C Wang, C Q Jin

Affiliation

¹ Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China. School of Physics, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China.

PMID: 29741494
DOI: 10.1088/1361-648X/aac367

Abstract

Pressure technique is an effective way to modify magnetic properties of diluted magnetic semiconductors (DMS). Based on single crystal, in-plane electrical transport properties of a new generation DMS (Ba_0.904K_0.096)(Zn_0.805Mn_0.195)₂As₂ have been measured with hydrostatic pressure up to 1.8 GPa. Magnetic properties of the single crystal sample are effectively tuned by pressure. Upon compression, the in-plane resistivity initially decreases but then increases when pressure is higher than 1.2 GPa. First principle calculations suggest that decrease of the resistivity is due to enhancement of density of state at Femi energy while increase of the resistivity under higher pressure is caused by distorted MnAs₄ tetrahedra. We reveal that the configuration of the MnAs₄ tetrahedra and strength of interlayer As-As bonding are of importance to ferromagnetic coupling of (Ba,K)(Zn,Mn)₂As₂.