Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO2/Al/Polyimide Structure

Jinshi Zhao; Ming Zhang; Shangfei Wan; Zhengchun Yang; Cheol Seong Hwang

doi:10.1021/acsami.7b16214

Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO₂/Al/Polyimide Structure

ACS Appl Mater Interfaces. 2018 Jan 17;10(2):1828-1835. doi: 10.1021/acsami.7b16214. Epub 2018 Jan 2.

Authors

Jinshi Zhao¹, Ming Zhang¹, Shangfei Wan¹, Zhengchun Yang¹, Cheol Seong Hwang²

Affiliations

¹ School of Electrical & Electronic Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology , Tianjin 300384, China.
² Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University , 599 Gwanak-ro, Gwanak-gu, Seoul 151-744, Republic of Korea.

PMID: 29256591
DOI: 10.1021/acsami.7b16214

Abstract

A highly flexible resistive switching (RS) memory was fabricated in the Al/TiO₂/Al/polyimide structure using a simple and cost-effective method. An electronic-resistive-switching-based flexible memory with high performance that can withstand a bending strain of up to 3.6% was obtained. The RS properties showed no obvious degradation even after the bending tests that were conducted up to 10 000 times, and over 4000 writing/erasing cycles were confirmed at the maximally bent state. The superior electrical properties against the mechanical stress of the device can be ascribed to the electronic RS mechanism related to electron trapping/detrapping, which can prevent the inevitable degradation in the case of the RS related with the ionic defects.

Keywords: electron trapping/detrapping; electronic resistive switching; high performance; highly flexible memory; mechanical endurance; titanium dioxide.