Switching from Negative to Positive Photoconductivity toward Intrinsic Photoelectric Response in InAs Nanowire

Yuxiang Han; Mengqi Fu; Zhiqiang Tang; Xiao Zheng; Xianghai Ji; Xiaoye Wang; Weijian Lin; Tao Yang; Qing Chen

doi:10.1021/acsami.6b13775

Switching from Negative to Positive Photoconductivity toward Intrinsic Photoelectric Response in InAs Nanowire

ACS Appl Mater Interfaces. 2017 Jan 25;9(3):2867-2874. doi: 10.1021/acsami.6b13775. Epub 2017 Jan 12.

Authors

Yuxiang Han¹, Mengqi Fu¹, Zhiqiang Tang¹, Xiao Zheng¹, Xianghai Ji^{2

3}, Xiaoye Wang^{2

3}, Weijian Lin⁴, Tao Yang^{2

3}, Qing Chen¹

Affiliations

¹ Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China.
² Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China.
³ College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences , Beijing 100049, China.
⁴ Laboratory for Condensed Matter Physics, Chinese Academy of Sciences , Beijing 100190, China.

PMID: 28049290
DOI: 10.1021/acsami.6b13775

Abstract

Negative photoconductivity (NPC) and positive photoconductivity (PPC) are observed in the same individual InAs nanowires grown by metal-organic chemical vapor deposition. NPC displays under weak light illumination due to photoexcitation scattering centers charged with hot carrier in the native oxide layer. PPC is observed under high light intensity. Through removing the native oxide layer and passivating the nanowire with HfO₂, we eliminate the NPC effect and realize intrinsic photoelectric response in InAs nanowire.

Keywords: InAs nanowire; NPC; PPC; carrier scattering; intrinsic photoelectric response.