Silicon nanowires fabricated by metal-assisted chemical etching can present low porosity and a rough surface depending on the doping level of the original silicon wafer. In this case, wiring of silicon nanowires may represent a challenging task. We investigated two different approaches to realize the electrical contacts in order to enable electrical measurement on a rough silicon nanowire device: we compared FIB-assisted platinum deposition for the fabrication of electrical contact with EBL technique.
Keywords: Electrical contacts; Electron beam lithography; Focused ion beam; Metal-assisted chemical etching; Nanosphere lithography; Rough surface; Schottky barrier; Silicon nanowires.