Nonlinear Electron-Lattice Interactions in a Wurtzite Semiconductor Enabled via Strongly Correlated Oxide

Yiping Wang; Lucas Seewald; Yi-Yang Sun; Pawel Keblinski; Xin Sun; Shengbai Zhang; Toh-Ming Lu; Jared M Johnson; Jinwoo Hwang; Jian Shi

doi:10.1002/adma.201602178

Nonlinear Electron-Lattice Interactions in a Wurtzite Semiconductor Enabled via Strongly Correlated Oxide

Adv Mater. 2016 Oct;28(40):8975-8982. doi: 10.1002/adma.201602178. Epub 2016 Aug 30.

Authors

Affiliations

¹ Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA.
² Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA.
³ Department of Materials Science and Engineering, the Ohio State University, Columbus, OH, 43212, USA.
⁴ Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA. shij4@rpi.edu.

PMID: 27572096
DOI: 10.1002/adma.201602178

Abstract

With VO₂ , a classic strongly correlated oxide material, a model semiconductor CdS is stretched and its electron-lattice interaction in a nonlinear manner is modulated. Optical spectroscopy is applied to probe the electronic band structure-associated parameters which is explained by the theoretical prediction based on k·p method and microscopy study. The research provides a new avenue on dynamic straining engineering.

Keywords: electron-lattice interactions; nonlinear; phase transitions.