Physically Transient Resistive Switching Memory Based on Silk Protein

Hong Wang; Bowen Zhu; Xiaohua Ma; Yue Hao; Xiaodong Chen

doi:10.1002/smll.201502906

Physically Transient Resistive Switching Memory Based on Silk Protein

Small. 2016 May;12(20):2715-9. doi: 10.1002/smll.201502906. Epub 2016 Mar 29.

Authors

Hong Wang^{1

2}, Bowen Zhu², Xiaohua Ma¹, Yue Hao¹, Xiaodong Chen²

Affiliations

¹ School of Advanced Materials and Nanotechnology, Key Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China.
² School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798.

PMID: 27028213
DOI: 10.1002/smll.201502906

Abstract

Physically transient resistive switching devices based on silk protein are successfully demonstrated. The devices can be absolutely dissolved in deionized water or in phosphate-buffered saline in 2 h. At the same time, a reasonable resistance OFF/ON ratio of larger than 10(2) and a retention time of more than 10(4) s are achieved for nonvolatile memory applications.

Keywords: memory; proteins; resistive switching; transient electronics.

MeSH terms

Electronics / methods*
Fibroins / chemistry
Nanotechnology / methods*
Silk / chemistry*

Substances

Silk
Fibroins