Reply to "Comment on 'Metal Semiconductor Field-Effect Transistor with MoS₂/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed'"
ACS Nano. 2016 Feb 23;10(2):1716-7.
doi: 10.1021/acsnano.5b08198.
Epub 2016 Feb 4.