Reply to "Comment on 'Metal Semiconductor Field-Effect Transistor with MoS₂/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed'"

ACS Nano. 2016 Feb 23;10(2):1716-7. doi: 10.1021/acsnano.5b08198. Epub 2016 Feb 4.
No abstract available

Publication types

  • Comment
  • Letter
  • Research Support, Non-U.S. Gov't