Electronic Properties of Si-Hx Vibrational Modes at Si Waveguide Interface

J Phys Chem Lett. 2015 Oct 1;6(19):3988-93. doi: 10.1021/acs.jpclett.5b01918. Epub 2015 Sep 23.

Abstract

Attenuated total reflectance (ATR) and X-ray photoelectron spectroscopy in suite with Kelvin probe were conjugated to explore the electronic properties of Si-Hx vibrational modes by developing Si waveguide with large dynamic detection range compared with conventional IR. The Si 2p emission and work-function related to the formation and elimination of Si-Hx bonds at Si surfaces are monitored based on the detection of vibrational mode frequencies. A transition between various Si-Hx bonds and thus related vibrational modes is monitored for which effective momentum transfer could be demonstrated. The combination of the aforementioned methods provides for results that permit a model for the kinetics of hydrogen termination of Si surfaces with time and advanced surface characterizing of hybrid-terminated semiconducting solids.

Keywords: ATR; Si waveguide; Si−Hx vibrational modes; XPS; work-function.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Electrons*
  • Hydrogen / chemistry*
  • Photoelectron Spectroscopy
  • Silicon / chemistry*
  • Vibration

Substances

  • Hydrogen
  • Silicon