Advanced Organic Permeable-Base Transistor with Superior Performance

Markus P Klinger; Axel Fischer; Felix Kaschura; Reinhard Scholz; Björn Lüssem; Bahman Kheradmand-Boroujeni; Frank Ellinger; Daniel Kasemann; Karl Leo

doi:10.1002/adma.201502788

Advanced Organic Permeable-Base Transistor with Superior Performance

Adv Mater. 2015 Dec 16;27(47):7734-9. doi: 10.1002/adma.201502788. Epub 2015 Oct 20.

Authors

Markus P Klinger¹, Axel Fischer¹, Felix Kaschura^{1

2}, Reinhard Scholz¹, Björn Lüssem³, Bahman Kheradmand-Boroujeni^{2

4}, Frank Ellinger^{2

4}, Daniel Kasemann¹, Karl Leo¹

Affiliations

¹ Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Str. 1, 01062, Dresden, Germany.
² Center for Advancing Electronics Dresden, Technische Universität Dresden, 01062, Dresden, Germany.
³ Department of Physics, Kent State University, Kent, OH, 44242, USA.
⁴ Chair for Circuit Design and Network Theory, Technische Universität Dresden, Helmholtzstr. 18, 01062, Dresden, Germany.

PMID: 26484500
DOI: 10.1002/adma.201502788

Abstract

An optimized vertical organic permeable-base transistor (OPBT) competing with the best organic field-effect transistors in performance, while employing low-cost fabrication techniques, is presented. The OPBT stands out by its excellent power efficiency at the highest frequencies.

Keywords: high frequency; permeable base; short channel; thin-film transistor; vertical transistor.