Ultra-low voltage and ultra-low power consumption nonvolatile operation of a three-terminal atomic switch

Qi Wang; Yaomi Itoh; Tohru Tsuruoka; Masakazu Aono; Tsuyoshi Hasegawa

doi:10.1002/adma.201502678

Ultra-low voltage and ultra-low power consumption nonvolatile operation of a three-terminal atomic switch

Adv Mater. 2015 Oct 21;27(39):6029-33. doi: 10.1002/adma.201502678. Epub 2015 Aug 28.

Authors

Qi Wang^{1

2

3}, Yaomi Itoh^{1

2}, Tohru Tsuruoka^{1

2}, Masakazu Aono¹, Tsuyoshi Hasegawa^{1

2

4}

Affiliations

¹ World Premier International (WPI) Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki, 305-0044, Japan.
² Japan Science and Technology Agency, CREST, Chiyoda, Tokyo, 102-0075, Japan.
³ School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, China.
⁴ Faculty of Science and Engineering, Waseda University, 3-4-1 Ookubo, Shinjuku-ku, Tokyo, 169-8555, Japan.

PMID: 26314544
DOI: 10.1002/adma.201502678

Abstract

Nonvolatile three-terminal operation, with a very small range of bias sweeping (-80 to 250 mV), a high on/off ratio of up to six orders of magnitude, and a very small gate leakage current (<1 pA), is demonstrated using an Ag (gate)/Ta2 O5 (ionic transfer layer)/Pt (source), Pt (drain) three-terminal atomic switch structure.

Keywords: ReRAM; atomic switches; low voltage; redox; three terminal.