Catalyst-free, selective growth of ZnO nanowires directly on the commonly used dielectric SiO2 layer is of both scientific significance and application importance, yet it is still a challenge. Here, we report a facile method to grow single-crystal ZnO nanowires on a large scale directly on SiO2/Si substrate through vapor-solid mechanism without using any predeposited metal catalyst or seed layer. We found that a rough SiO2/Si substrate surface created by the reactive ion etching is critical for ZnO growth without using catalyst. ZnO nanowire array exclusively grows in area etched by the reactive ion etching method. The advantages of this method include facile and safe roughness-assisted catalyst-free growth of ZnO nanowires on SiO2/Si substrate and the subsequent transfer-free fabrication of electronic or optoelectronic devices. The ZnO nanowire UV photodetector fabricated by a transfer-free process presented high performance in responsivity, quantum efficiency and response speed, even without any post-treatments. The strategy shown here would greatly reduce the complexity in nanodevice fabrication and give an impetus to the application of ZnO nanowires in nanoelectronics and optoelectronics.
Keywords: UV photodetector; ZnO nanowires; catalyst-free; transfer-free.