Surface Transfer Doping-Induced, High-Performance Graphene/Silicon Schottky Junction-Based, Self-Powered Photodetector

Small. 2015 Oct 7;11(37):4829-36. doi: 10.1002/smll.201501298. Epub 2015 Jul 17.

Du Xiang^{1

2}, Cheng Han^{1

2}, Zehua Hu^{1

2}, Bo Lei^{1

2}, Yiyang Liu^{2

3}, Li Wang⁴, Wen Ping Hu^{5

6}, Wei Chen^{1

2

3

7}

¹ Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore.
² Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546, Singapore.
³ Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543, Singapore.
⁴ Institute for Advanced Study and Department of Physics, Nanchang University, 999 Xue Fu Da Dao, Nanchang, 330031, China.
⁵ Department of Chemistry, School of Science, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering, Tianjin, 300072, China.
⁶ Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China.
⁷ National University of Singapore (Suzhou) Research Institute, 377 Lin Quan Street, Suzhou Industrial Park, Jiang Su, 215123, China.

No abstract available

Keywords: Gr/Si; MoO3; Schottky junctions; photodetecting performance; photodetectors; surface transfer doping.

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