Pt/Ta2 O5 /HfO2- x /Ti resistive switching memory competing with multilevel NAND flash

Jung Ho Yoon; Kyung Min Kim; Seul Ji Song; Jun Yeong Seok; Kyung Jean Yoon; Dae Eun Kwon; Tae Hyung Park; Young Jae Kwon; Xinglong Shao; Cheol Seong Hwang

doi:10.1002/adma.201501167

Pt/Ta2 O5 /HfO2- x /Ti resistive switching memory competing with multilevel NAND flash

Adv Mater. 2015 Jul 1;27(25):3811-6. doi: 10.1002/adma.201501167. Epub 2015 May 13.

Authors

Affiliations

¹ Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 151-744, Korea.
² Hewlett-Packard Laboratories, Hewlett-Packard Company, Palo Alto, CA, 94304, USA.

PMID: 25973913
DOI: 10.1002/adma.201501167

Abstract

Pt/Ta2 O5 /HfO2- x /Ti resistive switching memory with a new circuit design is presented as a feasible candidate to succeed multilevel-cell (MLC) NAND flash memory. This device has the following characteristics: 3 bit MLC, electroforming-free, self-rectifying, much higher cell resistance than interconnection wire resistance, low voltage operation, low power consumption, long-term reliability, and only an electronic switching mechanism, without an ionic-motion-related mechanism.

Keywords: electroforming-free; multilevel switching; resistive switching memory; self-rectifying; uniformity.