Single grain boundary break junction for suspended nanogap electrodes with gapwidth down to 1-2 nm by focused ion beam milling

Ajuan Cui; Zhe Liu; Huanli Dong; Yujin Wang; Yonggang Zhen; Wuxia Li; Junjie Li; Changzhi Gu; Wenping Hu

doi:10.1002/adma.201500527

Single grain boundary break junction for suspended nanogap electrodes with gapwidth down to 1-2 nm by focused ion beam milling

Adv Mater. 2015 May 20;27(19):3002-6. doi: 10.1002/adma.201500527. Epub 2015 Apr 8.

Authors

Ajuan Cui¹, Zhe Liu², Huanli Dong¹, Yujin Wang², Yonggang Zhen¹, Wuxia Li², Junjie Li², Changzhi Gu², Wenping Hu^{1

3}

Affiliations

¹ Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China.
² Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
³ Collaborative Innovation Center of Chemical Science and Engineering (Tianjin) & Department of Chemistry, School of Science, Tianjin University, Tianjin, 300072, China.

PMID: 25854513
DOI: 10.1002/adma.201500527

Abstract

Single grain boundary junctions are used for the fabrication of suspended nanogap electrodes with a gapwidth down to 1-2 nm through the break of such junctions by focused ion beam (FIB) milling. With advantages of stability and no debris, such nanogap electrodes are suitable for single molecular electronic device construction.

Keywords: focused ion beam milling; molecular electronics; nanogap electrodes.