Fabrication of Ultrathin Bi2 S3 Nanosheets for High-Performance, Flexible, Visible-NIR Photodetectors

Guihuan Chen; Yongqiang Yu; Kun Zheng; Tao Ding; Wenliang Wang; Yang Jiang; Qing Yang

doi:10.1002/smll.201403508

Fabrication of Ultrathin Bi2 S3 Nanosheets for High-Performance, Flexible, Visible-NIR Photodetectors

Small. 2015 Jun 24;11(24):2848-55. doi: 10.1002/smll.201403508. Epub 2015 Feb 19.

Authors

Guihuan Chen¹, Yongqiang Yu^{1

2}, Kun Zheng², Tao Ding¹, Wenliang Wang¹, Yang Jiang², Qing Yang¹

Affiliations

¹ Hefei National Laboratory for Physical Sciences at Microscale, Department of Chemistry, Laboratory of Nanomaterials for Energy Conversion, Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China (USTC), Hefei, Anhui, 230026, P.R. China.
² School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui, 230009, P.R. China.

PMID: 25703599
DOI: 10.1002/smll.201403508

Abstract

Ultrathin Bi2 S3 nanosheets with thicknesses down to 2.2 nm are fabricated. The resultant ultrathin Bi2 S3 -based photoconductor shows high sensitivity to visible-near infrared light from 405 to 780 nm with a high external photoresponsivity up to 4.4 A W(-1) , high detectivity of ≈10(11) Jones, relatively fast response time of ≈10 μs, and high flexibility and durability.

Keywords: bismuth sulfide; nanosheets; photodetectors; photoresponse; photovoltaics.

Publication types

Research Support, Non-U.S. Gov't