Tunable, ultralow-power switching in memristive devices enabled by a heterogeneous graphene-oxide interface

Min Qian; Yiming Pan; Fengyuan Liu; Miao Wang; Haoliang Shen; Daowei He; Baigeng Wang; Yi Shi; Feng Miao; Xinran Wang

doi:10.1002/adma.201306028

Tunable, ultralow-power switching in memristive devices enabled by a heterogeneous graphene-oxide interface

Adv Mater. 2014 May 28;26(20):3275-81. doi: 10.1002/adma.201306028. Epub 2014 Feb 13.

Authors

Min Qian¹, Yiming Pan, Fengyuan Liu, Miao Wang, Haoliang Shen, Daowei He, Baigeng Wang, Yi Shi, Feng Miao, Xinran Wang

Affiliation

¹ National Laboratory of Solid-State Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, P. R. China.

PMID: 24677272
DOI: 10.1002/adma.201306028

Abstract

Memristive devices based on vertical heterostructures of graphene and TiOx show a significant power reduction that is up to ∼10(3) times smaller than that of conventional structures. This power reduction arises as a result of a tunneling barrier at the interface. The barrier is tunable, opening up the possibility of engineering several key memory characteristics.

Keywords: graphene; heterostructures; memristivity; switching devices; ultralow power.

Publication types

Research Support, Non-U.S. Gov't