Enhancing electron mobility at the LaAlO₃ /SrTiO₃ interface by surface control

Yanwu Xie; Christopher Bell; Yasuyuki Hikita; Satoshi Harashima; Harold Y Hwang

doi:10.1002/adma.201301798

Enhancing electron mobility at the LaAlO₃ /SrTiO₃ interface by surface control

Adv Mater. 2013 Sep 14;25(34):4735-8. doi: 10.1002/adma.201301798. Epub 2013 Jul 15.

Authors

Yanwu Xie¹, Christopher Bell, Yasuyuki Hikita, Satoshi Harashima, Harold Y Hwang

Affiliation

¹ Geballe Laboratory for Advanced Materials, Department of Applied Physics, Stanford University, Stanford, California 94305, USA; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA. xieyanwu@stanford.edu.

PMID: 23852878
DOI: 10.1002/adma.201301798

Abstract

Mobility of electrons confined at the LaAlO₃ /SrTiO₃ interface is significantly enhanced by surface control using surface charges and adsorbates, reaching a low temperature value more than 20 000 cm(2) V(-1) s(-1) . A uniform trend that mobility increases with decreasing sheet carrier density is observed.

Keywords: LaAlO3/SrTiO3; adsorbate; interface; surface charge.

Publication types

Research Support, U.S. Gov't, Non-P.H.S.