Temperature-independent transport in high-mobility dinaphtho-thieno-thiophene (DNTT) single crystal transistors

Wei Xie; Kristin Willa; Yanfei Wu; Roger Häusermann; Kazuo Takimiya; Bertram Batlogg; C Daniel Frisbie

doi:10.1002/adma.201300886

Temperature-independent transport in high-mobility dinaphtho-thieno-thiophene (DNTT) single crystal transistors

Adv Mater. 2013 Jul 5;25(25):3478-84. doi: 10.1002/adma.201300886. Epub 2013 May 21.

Authors

Wei Xie¹, Kristin Willa, Yanfei Wu, Roger Häusermann, Kazuo Takimiya, Bertram Batlogg, C Daniel Frisbie

Affiliation

¹ Department of Chemical Engineering and Materials Science, 421 Washington Ave SE, Minneapolis, MN 55455, USA.

PMID: 23696267
DOI: 10.1002/adma.201300886

Abstract

The angular and temperature dependence of the field-effect mobility are investigated for p-type DNTT single crystals in a vacuum-gap structure. Temperature-independent transport behavior and weak mobility anisotropy are observed, with the best mobility approaching 10 cm(2) V(-1) s(-1) . Structural characterization and simulation suggest exceptionally high-quality and high-purity crystals.

Keywords: DNTT single crystals; temperature independent transport; trap density of states; weak mobility anisotropy.

Publication types

Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.