Memory devices using a mixture of MoS₂ and graphene oxide as the active layer

Zongyou Yin; Zhiyuan Zeng; Juqing Liu; Qiyuan He; Peng Chen; Hua Zhang

doi:10.1002/smll.201201940

Memory devices using a mixture of MoS₂ and graphene oxide as the active layer

Small. 2013 Mar 11;9(5):727-31. doi: 10.1002/smll.201201940.

Authors

Zongyou Yin¹, Zhiyuan Zeng, Juqing Liu, Qiyuan He, Peng Chen, Hua Zhang

Affiliation

¹ School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.

PMID: 23161780
DOI: 10.1002/smll.201201940

Abstract

A mixed film consisting of 2D MoS₂ and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS₂ component in the MoS₂-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS₂-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤ 1.5 V) and high ON/OFF current ratio (≈ 10²).

Publication types

Research Support, Non-U.S. Gov't