Stretchable semiconductor technologies with high areal coverages and strain-limiting behavior: demonstration in high-efficiency dual-junction GaInP/GaAs photovoltaics

Small. 2012 Jun 25;8(12):1851-6. doi: 10.1002/smll.201102437. Epub 2012 Mar 29.

Abstract

Notched islands on a thin elastomeric substrate serve as a platform for dual-junction GaInP/GaAs solar cells with microscale dimensions and ultrathin forms for stretchable photovoltaic modules. These designs allow for a high degree of stretchability and areal coverage, and they provide a natural form of strain-limiting behavior, helping to avoid destructive effects of extreme deformations.

Publication types

  • Research Support, Non-U.S. Gov't
  • Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

  • Arsenicals / chemistry*
  • Dimethylpolysiloxanes / chemistry
  • Electrochemistry / methods
  • Electronics
  • Equipment Design
  • Finite Element Analysis
  • Gallium / chemistry*
  • Indium / chemistry*
  • Microscopy, Electron, Scanning / methods
  • Optics and Photonics
  • Phosphines / chemistry*
  • Photochemistry / methods
  • Prostheses and Implants
  • Semiconductors*
  • Surface Properties
  • Tensile Strength

Substances

  • Arsenicals
  • Dimethylpolysiloxanes
  • Phosphines
  • Indium
  • gallium arsenide
  • gallium phosphide
  • baysilon
  • Gallium
  • indium phosphide