Naphtho[2,1-b:6,5-b']difuran: a versatile motif available for solution-processed single-crystal organic field-effect transistors with high hole mobility

Chikahiko Mitsui; Junshi Soeda; Kazumoto Miwa; Hayato Tsuji; Jun Takeya; Eiichi Nakamura

doi:10.1021/ja2120635

Naphtho[2,1-b:6,5-b']difuran: a versatile motif available for solution-processed single-crystal organic field-effect transistors with high hole mobility

J Am Chem Soc. 2012 Mar 28;134(12):5448-51. doi: 10.1021/ja2120635. Epub 2012 Mar 16.

Authors

Chikahiko Mitsui¹, Junshi Soeda, Kazumoto Miwa, Hayato Tsuji, Jun Takeya, Eiichi Nakamura

Affiliation

¹ Department of Chemistry, School of Science, The University of Tokyo, Tokyo, Japan.

PMID: 22413837
DOI: 10.1021/ja2120635

Abstract

We here report naphtho[2,1-b:6,5-b']difuran derivatives as new p-type semiconductors that achieve hole mobilities of up to 3.6 cm(2) V(-1) s(-1) along with high I(on)/I(off) ratios in solution-processed single-crystal organic field-effect transistors. These features originate from the dense crystal packing and the resulting large intermolecular π-orbital overlap as well as from the small reorganization energy, all of which originate from the small radius of an oxygen atom.