Single n-GaN microwire/p-Silicon thin film heterojunction light-emitting diode

Opt Express. 2011 Oct 24;19(22):21692-7. doi: 10.1364/OE.19.021692.

Abstract

The emission and waveguiding properties of individual GaN microwires as well as devices based on an n-GaN microwire/p-Si (100) junction were studied for relevance in optoelectronics and optical circuits. Pulsed photoluminescence of the GaN microwire excited in the transverse or longitudinal direction demonstrated gain. These n-type GaN microwires were positioned mechanically or by dielectrophoretic force onto pre-patterned electrodes on a p-type Si (100) substrate. Electroluminescence from this p-n point junction was characteristic of a heterostructure light-emitting diode. Additionally, waveguiding was observed along the length of the microwire for light originating from photoluminescence as well as from electroluminescence generated at the p-n junction.

Publication types

  • Research Support, Non-U.S. Gov't
  • Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

  • Gallium / chemistry*
  • Light*
  • Microscopy
  • Nanowires / chemistry*
  • Optics and Photonics*
  • Silicon / chemistry*
  • Spectrum Analysis

Substances

  • Gallium
  • gallium nitrate
  • Silicon