Hydrogen-incorporation stabilization of metallic VO2(R) phase to room temperature, displaying promising low-temperature thermoelectric effect

Changzheng Wu; Feng Feng; Jun Feng; Jun Dai; Lele Peng; Jiyin Zhao; Jinlong Yang; Cheng Si; Ziyu Wu; Yi Xie

doi:10.1021/ja203186f

Hydrogen-incorporation stabilization of metallic VO2(R) phase to room temperature, displaying promising low-temperature thermoelectric effect

J Am Chem Soc. 2011 Sep 7;133(35):13798-801. doi: 10.1021/ja203186f. Epub 2011 Jun 13.

Authors

Changzheng Wu¹, Feng Feng, Jun Feng, Jun Dai, Lele Peng, Jiyin Zhao, Jinlong Yang, Cheng Si, Ziyu Wu, Yi Xie

Affiliation

¹ Hefei National Laboratory for Physical Sciences at Microscale, University of Science & Technology of China, Anhui, PR China.

PMID: 21634432
DOI: 10.1021/ja203186f

Abstract

Regulation of electron-electron correlation has been found to be a new effective way to selectively control carrier concentration, which is a crucial step toward improving thermoelectric properties. The pure electronic behavior successfully stabilized the nonambient metallic VO(2)(R) to room temperature, giving excellent thermoelectric performance among the simple oxides with wider working temperature ranges.