Nanophase evolution at semiconductor/electrolyte interface in situ probed by time-resolved high-energy synchrotron X-ray diffraction

Yugang Sun; Yang Ren; Dean R Haeffner; Jonathan D Almer; Lin Wang; Wenge Yang; Tu T Truong

doi:10.1021/nl102458k

Nanophase evolution at semiconductor/electrolyte interface in situ probed by time-resolved high-energy synchrotron X-ray diffraction

Nano Lett. 2010 Sep 8;10(9):3747-53. doi: 10.1021/nl102458k.

Authors

Yugang Sun¹, Yang Ren, Dean R Haeffner, Jonathan D Almer, Lin Wang, Wenge Yang, Tu T Truong

Affiliation

¹ Argonne National Laboratory, Center for Nanoscale Materials, 9700 South Cass Avenue, Argonne, Illinois 60439, USA. ygsun@anl.gov

PMID: 20681550
DOI: 10.1021/nl102458k

Abstract

Real-time evolution of nanoparticles grown at the semiconductor/electrolyte interface formed between a single crystalline n-type GaAs wafer and an aqueous solution of AgNO(3) has been studied by using high-energy synchrotron X-ray diffraction. The results reveal the distinct nucleation and growth steps involved in the growth of anisotropic Ag nanoplates on the surface of the GaAs wafer. For the first time, a quick transit stage is observed to be responsible for the structural transformation of the nuclei to form structurally stable seeds that are critical for guiding their anisotropic growth into nanoplates. Reaction between a GaAs wafer and AgNO(3) solution at room temperature primarily produces Ag nanoplates on the surface of the GaAs wafer in the dark and at room temperature. In contrast, X-ray irradiation can induce charge separation in the GaAs wafer to drive the growth of nanoparticles made of silver oxy salt (Ag(7)NO(11)) and silver arsenate (Ag(3)AsO(4)) at the semiconductor/electrolyte interface if the GaAs wafer is illuminated by the X-ray and reaction time is long enough.