Single crystalline Ge(1-x)Mn(x) nanowires as building blocks for nanoelectronics

Nano Lett. 2009 Jan;9(1):50-6. doi: 10.1021/nl802114x.

Abstract

Magnetically doped Si and Ge nanowires have potential application in future nanowire spin-based devices. Here, we report a supercritical fluid method for producing single crystalline Mn-doped Ge nanowires with a Mn-doping concentration of between 0.5-1.0 atomic % that display ferromagnetism above 300 K and a superior performance with respect to the hole mobility of around 340 cm(2)/Vs, demonstrating the potential of using these nanowires as building blocks for electronic devices.

Publication types

  • Evaluation Study
  • Research Support, Non-U.S. Gov't

MeSH terms

  • Computer-Aided Design
  • Crystallization / methods*
  • Electric Conductivity
  • Electronics / instrumentation*
  • Equipment Design
  • Equipment Failure Analysis
  • Germanium / chemistry*
  • Macromolecular Substances / chemistry
  • Manganese / chemistry*
  • Materials Testing
  • Molecular Conformation
  • Nanotechnology / instrumentation*
  • Nanotechnology / methods
  • Nanotubes / chemistry*
  • Nanotubes / ultrastructure*
  • Particle Size
  • Reproducibility of Results
  • Sensitivity and Specificity
  • Surface Properties

Substances

  • Macromolecular Substances
  • Germanium
  • Manganese