Atomic layer deposition process with TiF4 as a precursor for depositing metal fluoride thin films

Tero Pilvi; Mikko Ritala; Markku Leskelä; Martin Bischoff; Ute Kaiser; Norbert Kaiser

doi:10.1364/ao.47.00c271

Atomic layer deposition process with TiF4 as a precursor for depositing metal fluoride thin films

Appl Opt. 2008 May 1;47(13):C271-4. doi: 10.1364/ao.47.00c271.

Authors

Tero Pilvi¹, Mikko Ritala, Markku Leskelä, Martin Bischoff, Ute Kaiser, Norbert Kaiser

Affiliation

¹ Department of Chemistry, P.O. Box 55, University of Helsinki, FI-00014 Helsinki, Finland. Tero.Pilvi@helsinki.fi

PMID: 18449257
DOI: 10.1364/ao.47.00c271

Abstract

A novel atomic layer deposition process for the preparation of fluoride thin films in a temperature range of 225 degrees C-400 degrees C is introduced. The crystallinity, morphology, composition, thicknesses, refractive indices, and transmittance of the films are analyzed. Low impurity levels are obtained at 350 degrees C-400 degrees C with good stoichiometry. Refractive indices of 1.34-1.42 for MgF(2), 1.43 for CaF(2), and 1.57-1.61 for LaF(3) films are obtained.