Changes in electronic structure and chemical bonding upon crystallization of the phase change material GeSb2Te4

Phys Rev Lett. 2008 Jan 11;100(1):016402. doi: 10.1103/PhysRevLett.100.016402. Epub 2008 Jan 10.

Abstract

High-resolution photoelectron spectroscopy of in situ prepared films of GeSb2Te4 reveals significant differences in electronic and chemical structure between the amorphous and the crystalline phase. Evidence for two different chemical environments of Ge and Sb in the amorphous structure is found. This observation can explain the pronounced property contrast between both phases and provides new insight into the formation of the amorphous state.