Charge noise in liquid-gated single-wall carbon nanotube transistors

Nano Lett. 2008 Feb;8(2):685-8. doi: 10.1021/nl073271h. Epub 2008 Jan 25.

Abstract

The noise properties of single-walled carbon nanotube transistors (SWNT-FETs) are essential for the performance of electronic circuits and sensors. Here, we investigate the mechanism responsible for the low-frequency noise in liquid-gated SWNT-FETs and its scaling with the length of the nanotube channel down to the nanometer scale. We show that the gate dependence of the noise amplitude provides strong evidence for a recently proposed charge-noise model. We find that the power of the charge noise scales as the inverse of the channel length of the SWNT-FET. Our measurements also show that surprisingly the ionic strength of the surrounding electrolyte has a minimal effect on the noise magnitude in SWNT-FETs.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Artifacts*
  • Computer Simulation
  • Computer-Aided Design*
  • Crystallization / methods
  • Equipment Design
  • Equipment Failure Analysis
  • Materials Testing
  • Models, Theoretical*
  • Nanotechnology / instrumentation*
  • Nanotechnology / methods
  • Nanotubes, Carbon / chemistry*
  • Nanotubes, Carbon / ultrastructure*
  • Particle Size
  • Solutions
  • Transistors, Electronic*

Substances

  • Nanotubes, Carbon
  • Solutions