Crystallization of GeO(2)-SiO(2) glass by poling with ArF-laser excitation

Opt Lett. 1999 Oct 15;24(20):1404-6. doi: 10.1364/ol.24.001404.

Abstract

We report on crystallization of 15.7GeO(2) 84.3SiO(2) (in mol.%) glass by poling with ArF-laser excitation. The UV intensity was 100(mJ/cm (2))/pulse , and the number of shots was 10(4) . The crystallites that were observed in the glass were approximately 15-20microm in diameter. The crystallization feature was dependent on the poling electric field, showing a threshold field of ~0.5x10(5)V/cm , beyond which crystallization occurred.