Direct observation of the structural component of the metal-insulator phase transition and growth habits of epitaxially grown VO2 nanowires

Nano Lett. 2007 Jun;7(6):1570-4. doi: 10.1021/nl070439q. Epub 2007 May 18.

Abstract

We have grown epitaxially orientation-controlled monoclinic VO2 nanowires without employing catalysts by a vapor-phase transport process. Electron microscopy results reveal that single crystalline VO2 nanowires having a [100] growth direction grow laterally on the basal c plane and out of the basal r and a planes of sapphire, exhibiting triangular and rectangular cross sections, respectively. In addition, we have directly observed the structural phase transition of single crystalline VO2 nanowires between the monoclinic and tetragonal phases which exhibit insulating and metallic properties, respectively, and clearly analyzed their corresponding relationships using in situ transmission electron microscopy.

Publication types

  • Evaluation Study
  • Research Support, Non-U.S. Gov't

MeSH terms

  • Crystallization / methods*
  • Electric Wiring / instrumentation*
  • Equipment Design
  • Equipment Failure Analysis
  • Macromolecular Substances / chemistry
  • Materials Testing
  • Molecular Conformation
  • Nanotechnology / instrumentation*
  • Nanotechnology / methods
  • Nanotubes / chemistry*
  • Nanotubes / ultrastructure*
  • Particle Size
  • Phase Transition
  • Surface Properties
  • Vanadium Compounds / chemistry*

Substances

  • Macromolecular Substances
  • Vanadium Compounds